WJ-1000/1500 Series
The WJ-1000T and WJ-1500T TEOS systems deposit doped or undoped silicon dioxide (SiO2) films, created from the TEOS/Ozone CVD reaction. The WJ-1000T and WJ-1500T film applications include shallow trench isolation, capacitor ILD, Bitline ILD, Gate ILD, Sidewall spacer, PSG passivation, IMD gap fill and capacitor core oxides.
The WJ-1000H Hydride systems deposit doped or undoped silicon dioxide (SiO2) films, created from the Silane/Oxygen CVD reaction. Typcially, the silicon dioxide film is doped with Boron, Phosphorous and/or Germanium. Examples of the broad range of WJ-1000H semiconductor applications include pre-metal dielectric, interlayer dielectric and numerous spacer oxide.
Production-proven Performance
* Nearly 300 systems shipped to major fabs worldwide* Demonstrated high productivity and reliability
Multi-generation Capability
* Capable of 100-mm, 125-mm, 150-mm and 200-mm wafer processing* Process extendibility from 0.5 micron to 0.08 micron
* Characterized process models for Atmospheric Pressure processes
* SMIF/AGV compatible, complying with SEMI specifications
Superior Process Results
* Process muffle environment designed for process flexibility-Four matched deposition chambers are environmentally controlled to provide continually repeatable film results* High dopant incorporation in bulk film for best planarization
* High O3:R ratio or O2:R ratio in stability layer for as-deposited film stability
* High deposition temperature for superior film density
* High dopant incorporation without BPO4 crystals
* TEOS/Ozone or Silane/Oxygen CVD reations
Low Cost of Ownership
* MonoBlok™ Linear injector for improved reliability and lower CoO-Produces gap fill by separating the reactant and oxidant chemicals into laminar flow with controlled mixing above the surface* High throughput due to high deposition rate in bulk film
-Precise linear deposition zone produces consistent film properties over entire wafer surface